TJ9A10M3 डाटा शीट PDF( Datasheet )

TJ9A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ9A10M3 1. Applications • Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) 2. Features (1) (2) (3) Enh

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ9A10M3，ITJ9A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.17Ω. (VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V,