TIPL760C डाटा शीट PDF( Datasheet )

TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Curren

isc Silicon NPN Darlington Power Transistor FEATURES ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIP