TIP51 डाटा शीट PDF( Datasheet )

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isc Silicon NPN Power Transistors TIP51 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device

isc Silicon PNP Power Transistor DESCRIPTION ·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Collector Power Dissipation- : PC= 30W @TC≤ 100℃ ·Minim

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors TIP514 www.datasheet4u.com DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Wide area of safe operation APPLI

isc Silicon PNP Power Transistor DESCRIPTION ·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Collector Power Dissipation- : PC= 20W @TC≤ 100℃ ·Minim