TIP145 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Complement to Type TIP140 ·Minimum

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Pac

TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP140, TIP141 and TIP142 125 W a

TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/14

® TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MON

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching application

Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency switching applications. Features • H