TIP141T डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Complement to Type TIP146T ·Minimum L

TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitt

TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE