TIP117 डाटा शीट PDF( Datasheet )

SEMICONDUCTOR TECHNICAL DATA TIP117 EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ᴌHigh DC Current Gain. : hFE=1000(Min.), ᷤVC

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeter

isc Silicon PNP Darlington Power Transistor TIP117 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Satur

TIP115 / TIP117 — PNP Epitaxial Silicon Darlington Transistor November 2014 TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt

® TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED AN

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP110/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applicati