डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-45SL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
TIM5964-45SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION
IM3 |
Toshiba Semiconductor |
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TIM5964-45SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |