डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-35SLA | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.0dBm Single C |
Toshiba Semiconductor |
|
TIM5964-35SLA-251 | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET www.DataSheet4U.com
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM5964-35SLA-251
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER |
Toshiba Semiconductor |
|
TIM5964-35SLA-422 | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
TIM5964-35SLA-422
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN
G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTO |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |