TIM5359-4 डाटा शीट PDF( Datasheet )

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single C

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 10.5dB at 5.3GHz to 5.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5359-4UL