डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1011-5L | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 37.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-5L |
Toshiba Semiconductor |
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TIM1011-5L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |