TIC226 डाटा शीट PDF( Datasheet )

TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) This series is currently available, but not recommended for new designs. MT1 MT2

isc Triacs INCHANGE Semiconductor TIC226series DESCRIPTION ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-t

SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V

SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V

SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V

TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) This series is currently available, but not recommended for new designs. MT1 MT2

isc Triacs TIC226D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfor