डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
THN6301 | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA
o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC |
AUK |
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THN6301S | NPN Planer RF TRANSISTOR THN6301S
NPN Planer RF TRANSISTOR
SOT-23
¡à
DESCRIPTION
The THN6301S is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surfa |
ETC |
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THN6301U | NPN Planer RF TRANSISTOR THN6301U
NPN Planer RF TRANSISTOR
SOT-323 unit : mm
¡à
DESCRIPTION
The THN6301U is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequiecies It is suitable for a high de |
ETC |
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