| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS ol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC Symbol I C = 100 mA I C = 200 mA I E = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 7 A 70 35 4.0 — — 15 — — — |
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