डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TGI7785-130LHA | MICROWAVE POWER GaN HEMT MICROWAVE POWER GaN HEMT
TGI7785-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 44dBm ŋHIGH GAIN
GL= 11.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(M |
Toshiba |
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TGI7785-130LHA | MICROWAVE POWER GaN HEMT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |