डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TGI0910-50 | MICROWAVE POWER GaN HEMT MICROWAVE POWER GaN HEMT
TGI0910-50
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECI |
Toshiba |
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TGI0910-50 | MICROWAVE POWER GaN HEMT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |