| No. | Partie # | Fabricant | Description | Fiche Technique |
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Alpha & Omega Semiconductors |
AOTF7N65 |
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Alpha & Omega Semiconductors |
7A N-Channel MOSFET Power Dissipation B Derate above 25oC PD 192 38.5 1.5 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maxim |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-220FP Figure 1. Internal schematic diagram Order code STF7N65M2 VDS 650 V RDS(on) max 1.15 Ω ID 5A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Swit |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.56Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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