डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TDG100E90BEP | 100V E-mode GaN transistor TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor
Product Specification
Features
• 100 V enhancement mode GaN power switch
• Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 9 |
Teledyne |
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TDG100E90BEP | 100V E-mode GaN transistor | Teledyne |
www.DataSheet.in | 2017 | संपर्क |