डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58NYG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM TC58NYG2S0FBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Eras |
Toshiba |
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TC58NYG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |