TC58NYG1S3HBAI6 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TC58NYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM TC58NYG1S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically |
 Toshiba |
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| TC58NYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM | Toshiba |
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| TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM | Toshiba |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |