डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM TC58NYG1S3HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically |
Toshiba |
|
TC58NYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM | Toshiba |
|
TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |