डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58NVM9S3EBAI4 | 512M BIT (64M x 8 BIT) CMOS NAND E2PROM TC58NVM9S3EBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512M BIT (64M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasab |
Toshiba |
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TC58NVM9S3EBAI4 | 512M BIT (64M x 8 BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |