डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58BVG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM TC58BVG2S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically E |
Toshiba |
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TC58BVG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM | Toshiba |
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TC58BVG2S0HBAI6 | 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM | Toshiba |
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