डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
Si4606 | N+P Complementary Enhancement MOSFET Features
·Low On resistance. ·+4.5V drive. ·RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET
Si4606
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Cond |
Nanxin |
|
Si4606 | N+P Complementary Enhancement MOSFET | Nanxin |
www.DataSheet.in | 2017 | संपर्क |