डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SW1N60A | MOSFET SAMWIN
SW1N60A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
12 3
1. Gate 2. Drain 3. |
SEMIPOWER |
|
SW1N60A | SSW1N60A Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
www.DataSheet4U.com
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A
D2-PAK
2
Lower Input Capacitance Improved Gate Ch |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |