STP315N10F7 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor STP315N10F7 FEATURES ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.7mΩ(Max) @ VGS= 10V ·100%

STP315N10F7 Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ I