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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
STP13NM60N | N-CHANNEL POWER MOSFET STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N
Datasheet
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages
TAB
Features
3 12 TO-220FP
TAB
1 23 I2PAK
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ST Microelectronics |
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STP13NM60N | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·Typical RDS(on)=0.28Ω ·Low gate input resistance ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device
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INCHANGE |
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STP13NM60ND | N-Channel Power MOSFET STP13NM60ND
Datasheet
N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP13NM60ND
650 V
38 |
STMicroelectronics |
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STP13NM60ND | N-Channel MOSFET isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
STP13NM60ND
·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimu |
INCHANGE |
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