STI20N65M5 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Min

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features Order codes STB2