STD12NM50ND डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor STD12NM50ND FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38