SSF7N60 डाटा शीट PDF( Datasheet )

SSF7N60 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very

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SSF7N60B November 2001 SSF7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A TO-220F Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpo