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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SSF1090 | N-Channel enhancement mode trench power MOSFET SSF1090
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson
ID =15A BV=100V Rdson=0.06Ω (Typ.)
Fully |
Silikron Semiconductor |
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SSF1090 | 100V N-Channel MOSFET SSF1090
100V N-Channel MOSFET
Features Advanced trench process technology Ideal for convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche volt |
Good-Ark |
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SSF1090A | MOSFET
Main Product Characteristics:
VDSS
100V
RDS(on) 72mΩ(typ)
ID 15A ①
D2PAK
Features and Benefits:
Advanced trench MOSFET process te |
Silikron |
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SSF1090D | MOSFET Main Product Characteristics:
VDSS RDS(on)
100V 60mΩ (typ.)
ID 15A ①
TO-252 (D-PAK)
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
genera |
Silikron |
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