SS8050 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching

NPN Epitaxial Silicon Transistor SS8050 Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are

NPN General Purpose Transistors P b Lead(Pb)-Free SS8050 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Symbol VCBO Collector-Emi

SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS85

Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS z High Collector Current. Produ

Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Complimentary to SS8550  Power Dissip

SS8050 TRANSISTOR (NPN) Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [SS8050] © Bruckewell Technology Corpor