SPP80P06P डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| SPP80P06P | Power-Transistor www.DataSheet4U.com
Preliminary data
SPP80P06P SPB80P06P
SIPMOS ® Power-Transistor
Features
·
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enha |
 Infineon Technologies |
|
| SPP80P06P | P-Channel MOSFET isc P-Channel MOSFET Transistor
SPP80P06P，ISPP80P06P
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.023Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
|
| SPP80P06PH | Power-Transistor SPP80P06P H SIPMOS ® Power-Transistor
Features
Product Summary
· P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · |
Infineon Technologies |
शेयर लिंक :
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www.DataSheet.in | 2017 | संपर्क |