SPP12N50C3 डाटा शीट PDF( Datasheet )

SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A • Periodic av

isc N-Channel MOSFET Transistor SPP12N50C3，ISPP12N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lo