SPP11N60CFD डाटा शीट PDF( Datasheet )

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic f

isc N-Channel MOSFET Transistor SPP11N60CFD，ISPP11N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.44Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to