डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPI12N50C3 | Power Transistor SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
ID
11.6 A
• Periodic av |
Infineon Technologies |
|
SPI12N50C3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |