डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPI11N60S5 | Power Transistor Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improve |
Infineon Technologies |
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SPI11N60S5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPI11N60S5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum L |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |