डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPI11N60C3 | Power Transistor SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
• Periodic avalanche |
Infineon Technologies |
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SPI11N60C3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |