SPD30N03S2L डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| SPD30N03S2L | N-Channel MOSFET isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
|
| SPD30N03S2L-07 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala |
 Infineon Technologies |
|
| SPD30N03S2L-07G | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala |
Infineon Technologies |
|
| SPD30N03S2L-10 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C o |
Infineon Technologies |
|
| SPD30N03S2L-10G | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C o |
Infineon Technologies |
|
| SPD30N03S2L-20 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala |
Infineon Technologies |
|
| SPD30N03S2L-20G | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala |
 Infineon |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |