डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPD30N03 | SIPMOS Power Transistor www.DataSheet4U.com
SIPMOS® Power Transistor
Features • N channel
•
SPD 30N03
30 30 V A
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
Enhancemen |
Infineon Technologies |
|
SPD30N03L | SIPMOS Power Transistor SPD30N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 30
V A
RDS(on) 0.012 |
Siemens Semiconductor |
|
SPD30N03S2L | N-Channel MOSFET isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
SPD30N03S2L-07 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala |
Infineon Technologies |
|
SPD30N03S2L-07G | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala |
Infineon Technologies |
|
SPD30N03S2L-10 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C o |
Infineon Technologies |
|
SPD30N03S2L-10G | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C o |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |