डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPD07N60S5 | Power Transistor Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated |
Infineon Technologies |
|
SPD07N60S5 | N-Channel MOSFET isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |