डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPD02N60 | SIPMO Power Transistor Preliminary data
SPD02N60 SPU02N60
SIPMOS® Power Transistor • N-Channel
• Enhancement mode
• Avalanche rated
Pin 1 G
Type SPD02N60 SPU02N60
Pin 2 D
Pin 3 S
VDS
ID
600 V 2 A
RDS(on) @ VGS Packag |
Siemens Semiconductor Group |
|
SPD02N60 | SIPMO Power Transistor Preliminary data
SPD02N60 SPU02N60
SIPMOS® Power Transistor • N-Channel
• Enhancement mode
• Avalanche rated
www.DataSheet4U.com
Pin 1 G
Pin 2 D
Pin 3 S
Type SPD02N60 SPU02N60
VDS
ID
600 V 2 A
|
Siemens Semiconductor |
|
SPD02N60C3 | Cool MOS Power Transistor &RRO026 3RZHU7UDQVLVWRU
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63'1& 63 |
Infineon Technologies |
|
SPD02N60C3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
SPD02N60C3,ISPD02N60C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
|
SPD02N60S5 | Cool MOS Power Transistor Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improve |
Infineon Technologies |
|
SPD02N60S5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
SPD02N60S5,ISPD02N60S5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |