डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPB80P06P | Power Transistor SPB80P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance RDS(on |
Infineon Technologies |
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SPB80P06P | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio |
INCHANGE |
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SPB80P06PG | Power Transistor SPB80P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance RDS(on |
Infineon |
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