SPA16N50C3 डाटा शीट PDF( Datasheet )

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum L

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalan