डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPA11N60C3 | Power Transistor SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
• Periodic avalanche |
Infineon Technologies |
|
SPA11N60C3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
|
SPA11N60C3E8185 | Power Transistor SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
• Periodic avalanche |
Infineon Technologies |
|
SPA11N60C3E8185 | N-Channel MOSFET isc N-Channel MOSFET Transistor
SPA11N60C3E8185,SPA11N60C3E8185
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |