डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SP201 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
SP201
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Br |
Polyfet RF Devices |
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SP20100R | 20.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente
SP20100R
Voltage 100V 20.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of “-C” specifies halogen free
FEATURES
Low forward voltage drop High current |
SeCoS |
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SP2013 | P-Channel Enhancement Mode Field Effect Transistor Green Product
SP2013
Ver 1.1
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
20 @ VGS=-4.5V 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS |
SamHop |
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SP20150 | VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers SP20150
Elektronische Bauelemente
VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
ITO-220
FEATURES
* Low forward voltage drop * High curr |
SeCoS |
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SP20150R | 20.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente
SP20150R
Voltage 150 V 20.0 Amp Schottky Barrier Rectifiers
FEATURES
Low forward voltage drop High current capability High reliability High surge current capability |
SeCoS |
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