डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SNN4010D | N-Ch Trench MOSFET SNN4010D
N-Ch Trench MOSFET
Power Switching Application
Features
Drain-source breakdown voltage: BVDSS=100V Low gate charge device
Low drain-source On resistance: RDS(on)=25mΩ (Typ.) Advance |
KODENSHI KOREA |
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SNN4010D | N-Ch Trench MOSFET | KODENSHI KOREA |
www.DataSheet.in | 2017 | संपर्क |