SN74ABT541B डाटा शीट PDF( Datasheet )

www.ti.com FEATURES • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 • Typical VOLP (Output Ground Boun

D Controlled Baseline − One Assembly/Test Site, One Fabrication Site D Enhanced Diminishing Manufacturing Sources (DMS) Support D Enhanced Product-Change Notification D Qualification Pedigree† D State-of-th

D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 150 V Using Machine Model (C = 200 pF, R = 0) D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Signifi