SMBT3904 डाटा शीट PDF( Datasheet )

NPN Silicon Switching Transistor High DC current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: SMBT 3906 (PNP) q SMBT 3904 Type SMBT 3904 Marking s1A Ordering Code

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in on

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose Transistors The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is design

SMBT3904PN NPN/PNP Silicon Switching Transistor Array
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP 4 5 6 Transistors in one package 2 Tape loading

SMBT 3904S NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in on

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in on

SMBT3904U NPN Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors 5 6 4 with good matching in