SL12N डाटा शीट PDF( Datasheet )

Low VF Chip Schottky Barrier Rectifier Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in

SL12N thru SL14N Low VF Schottky Barrier Diodes P b Lead(Pb)-Free Features: *Plastic package has Underwriters Laboratory Flammability Classi cation 94V-O Utilizing Flame Retardant Epoxy Molding Compound. * For

N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 12A 650V 0.73Ω 45nC SL12N65F 用途  高频开关电源  电子整流器  LED 电源 APPLICATIONS  High effi