SI2312 डाटा शीट PDF( Datasheet )

20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), [email protected], [email protected] < 31mΩ RDS(ON), [email protected], [email protected] < 37mΩ RDS(ON), [email protected], [email protected] < 85mΩ Features Advanced trench process technology High Den

Si2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (

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SI2312 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 沟道场效应管。 Trench FET Power M

N-Channel 20 V (D-S) MOSFET Si2312BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 0.047 at VGS = 1.8 V ID (A) 5.0 4.6 4.1 Qg (Typ.) 7.5 FEATURES �

New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0318 at VGS = 4.5 V 20 0.0356 at VGS = 2.5 V 0.0414 at VGS = 1.8 V ID (A)e 6a 6a 5.6 8.8 nC Qg (Typ.)

N-Channel 20 -V (D-S) MOSFET Si2312DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V ID (A) 4.9 4.4 3.9 Qg (Typ) 11.2 TO-236 (SOT-23)